We report the measurements of ferroelectricity in LiNbO3 (LN)-type ZnSnO3 /ZnO nanocomposite thick films deposited on Pt-Si substrates using a novel combined chemical/physical technique. Phase-pure LN-type ZnSnO3 nanorods (NRs) were first synthesized using a low temperature solvothermal process and characterized in detail using X-ray diffraction, electron microscopy and Raman spectroscopy. The prototype device for polarization measurements was fabricated by depositing the as-prepared LN-type ZnSnO3 NRs onto conducting Pt-Si substrates (also served as bottom electrodes). A dielectric filler-layer of polycrystalline ZnO was deposited on top using pulsed laser deposition to fabricate LN-type ZnSnO3 /ZnO nanocomposite films. Polarization measurements of the Pt/ZnSnO3+ZnO/Pt nanocomposite capacitors at 300K showed indication of polarization switching in the hysteresis loops with a remanent polarization (Pr) of 13 μC/cm2 at a low applied voltage of 8 V. The work provides information on the coherent design of future FE memory devices based on the emerging non-toxic Pb-free material LN-ZnSnO3.